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Journals

24.
 Electrical properties of MoSe2 metal-oxide-semiconductor capacitors
H. I. Jeong, S. Park, H. I. Yang, and W. Choi, Materials Letters,253,209,(2019)
23.
 Large-area MoS2-MoOx heterojunction thin-film photodetectors with wide spectral range and enhanced photoresponse
H. Im, N. Liu, A. Bala, S. Kim, and W. Choi, APL Materials,7,061101,(2019)
22.
 Sensitivity and Stability Enhancement of Surface Plasmon Resonance Biosensor based on a Large-Area Ag/MoS2 Substrate
N. Kim, M. Choi, T. W. Kim, W. Choi, S. Y. Park, K. M. Byun, Sensors,19,1894,(2019)
21.
 Photoluminescence quenching in monolayer transition metal dichalcogenides by Al2O3 encapsulation
S. Y. Kim, H. I. Yang, and W. Choi, Applied Physics Letters,113,113104,(2018)
20.
 High-responsivity multilayer MoSe2 phototransistors with fast response time
H. Lee, J. Ahn, S. Im, J. Kim, and W. Choi, Scientific Reports,8,11545,(2018)
19.
 Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment
H. I. Yang, S. Park, and W. Choi, Applied Surface Science,443,91,(2018)
18.
 Large-area synthesis of monolayer MoSe2 films on SiO2 substrates by atmospheric pressure chemical vapor deposition
Y. Zhao, H. J. Lee, W. Choi, W. Fei, and C. J. Lee, RSC Advances,7,27969,(2017)
17.
 Recent progress in high-mobility thin-film transistors based on multilayer 2D materials
Y. K. Hong, N. Liu, D. Yin, D. H. Kim, S. Hong, S. Kim, W. Choi, and Y. Yoon, Journal of Physics D,50,164001,(2017)
16.
 Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors
H. A. Lee, S. Y. Kim, J. Kim, and W. Choi, Journal of Physics D,50,094001,(2017)
15.
 Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation
S. Y. Kim, S. Park, and W. Choi, Applied Physics Letters,109,152101,(2016)


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