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Journals

47.
 Effect of deposition temperature on the electrical properties of solid-phase crystallized Ge thin films
Y. Cho, M. Jiang, D. Ahn, and W. Choi, Electronic Materials Letters,20,694,(2024)
46.
 Enhanced thickness uniformity of MoS2 thin films on SiO2/Si substrates via substrate pre-treatment with oxygen plasma
I. Lim, Y. Koo, and W. Choi, Electronic Materials Letters,20,603,(2024)
45.
 Low-temperature crystallization of BeO-assisted polycrystalline germanium layer for monolithic 3D integration
H. Bong, Y. Jang, D. Jung, Y. Cho, W. Choi, D. Ahn, P. R. Sultane, C. W. Bielawski, J. Oh, Applied Surface Science,671,160723,(2024)
44.
 Substrate-dependent carrier mobility in polycrystalline Ge thin films
H. Kwon, M. Jiang, D. Ahn, and W. Choi, Materials Today Communications,40,109631,(2024)
43.
 Engineering TiOx interlayers in high vacuum for Al-contacted MoSe2 transistors
Y. Oh, Y. Jo, and W. Choi, Microelectronic Engineering,286,112139,(2024)
42.
 Optical Enhancement of Indirect Bandgap Two-Dimensional Transition Metal Dichalcogenides for Multi-functional Optoelectronic Sensors
R. Dutta, A. Bala, A. Sen, M. R. Spinazze, H. Park, W. Choi, Y. Yoon, and S. Kim, Advanced Materials,35,2303272,(2023)
41.
 Effect of SiO2 capping on the solid-phase crystallized Ge thin films
S. Baik, M. Jiang, H. Soh, D. Ahn, and W. Choi, Materials Science in Semiconductor Processing,165,107682,(2023)
40.
 Effects of forming gas annealing on the doping of monolayer MoS2 crystals
Y. Koo and W. Choi, Current Applied Physics,48,29,(2023)
39.
 Tunable, stable, and reversible n-type doping of MoS2 via thermal treatment in N-methyl-2-pyrrolidone
H. Sunwoo and W. Choi, Nanotechnology,33,50LT01,(2022)
38.
 Decreased n-type doping behavior of monolayer MoS2 crystals annealed in sulfur atmosphere
S. Baik, Y. Koo, and W. Choi, Current Applied Physics,42,38,(2022)


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