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Journals

14.
 Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors
J. H. Kim, T. H. Kim, H. Lee, Y. R. Park, W. Choi, and C. J. Lee, AIP Advances,6,065106,(2016)
13.
 Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals
S. Park, S. Y. Kim, Y. Choi, M. Kim, H. Shin, J. Kim, and W. Choi, ACS Applied Materials & Interfaces,8,11189,(2016)
12.
 Large-area growth of uniform single-layer MoS2 by chemical vapor deposition
S. Baek, Y. Choi, and W. Choi, Nanoscale Research Letters,10,388,(2015)
11.
 Giant Photoamplification of Indirect-Bandgap Multilayer MoS2 Phototransistors with Local Bottom-Gate Structures
J. Kwon, Y. K. Hong, G. Han, I. Omkaram, W. Choi, S. Kim, and Y. Yoon, Advanced Materials,27,2224,(2015)
Selected for inside front cover
10.
 Two-dimensional layered MoS2 biosensors enable highly sensitive detection of biomolecules
J. Lee, P. Dak, Y. Lee, H. Park, W. Choi, M. A. Alam, and S. Kim, Scientific Reports,4,7352,(2014)
9.
 Variability of Ti electrical contact properties in multilayer MoS2 thin-film transistors
S. Y. Kim, S. Park, and W. Choi, Applied Physics A,117,761,(2014)
8.
 Electrical Performance of Local Bottom-Gate MoS2 Thin-Film Transistors
J. Kwon, I. Omkaram, W. Song, M. Kim, Y. K. Hong, W. Choi, and S. Kim, Journal of Information Display,15,107,(2014)
7.
 Enhanced performance of flexible multi-layer MoS2 field effect transistors with picosecond laser annealed contacts
H.-J. Kwon, W. Choi, D. Lee, Y. Lee, J. Kwon, B. Yoo, C. P. Grigoropoulos, and S. Kim, Nano Research,7,1137,(2014)
Selected for cover
6.
 Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment
J. Yang, S. Kim, W. Choi, S. H. Park, M.-H. Cho, and H. Kim, ACS Applied Materials & Interfaces,5,4739,(2013)
5.
 Autocatalytic effect of amine-terminated precursors in mixed self-assembled monolayers
X. Bulliard, A. Benayad, S.-G. Ihn, S. Yun, J.-H. Park, W. Choi, Y.-S. Choi, and Y. Kim, RSC Advances,3,1112,(2013)


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