국민대학교 신소재공학과

Journals

37.

Performance enhancement of multilayer MoS2 phototransistors via photoresist encapsulation
H. Sunwoo, Y. Jeong, S. Im, and W. Choi, Current Applied Physics,41,14,(2022)

36.

Performance enhancement of WS2 transistors via double annealing
M. Ji and W. Choi, Microelectronic Engineering,255,111709,(2022)

35.

Enhanced performance of multilayer MoS2 transistors encapsulated with a photoresist
H. Sunwoo and W. Choi, Nanotechnology,32,42LT01,(2021)

34.

Capacitance-voltage analysis of Al2O3/WS2 metal-oxide-semiconductor capacitors
M. Ji and W. Choi, Journal of Physics D,54,41LT01,(2021)

33.

Unusual n-type doping of monolayer WSe2 by CF4 plasma treatment
J. H. Jung and W. Choi, Materials Letters,295,129865,(2021)

32.

Capacitance-voltage measurements of monolayer MoS2 metal-oxide-semiconductor capacitors
H. I. Yang and W. Choi, Microelectronic Engineering,238,111507,(2021)

31.

In situ electron-doping of MoS2 thin films by embedded MoOxSy nanoparticles during chemical vapor deposition
M. Kang, J. Lee, and W. Choi, Journal of Materials Science,56,2879,(2021)

30.

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics
J. Lee, L. Cheng, A. V. Ravichandran, A. T. Lucero, H. Zhu, Z. Che, M. Catalano, M. J. Kim, R. M. Wallace, A. Venugopal, L. Colombo, W. Choi, and J. Kim, ACS Applied Materials & Interfaces,12,36688,(2020)

29.

Electrical properties of Al2O3/WSe2 interface based on capacitance-voltage characteristics
M. Kang, H. I. Yang, and W. Choi, Journal of Physics D,53,32LT01,(2020)

28.

Rapid and mass-producible synthesis of high-crystallinity MoSe2 nanosheets by ampoule-loaded chemical vapor deposition
N. Liu, W. Choi, H. Kim, C. Jung, J. Kim, S. H. Choo, Y. Kwon, B.-S. An, S. Hong, S. So, C.-W. Yang, J. Hur, S. Kim, Nanoscale,12,6999,(2020)
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Journals